Spectral sensitivity of hot carrier solar cells
Identifieur interne : 000043 ( Main/Repository ); précédent : 000042; suivant : 000044Spectral sensitivity of hot carrier solar cells
Auteurs : RBID : Pascal:14-0027515Descripteurs français
- Pascal (Inist)
- Sensibilité spectrale, Porteur chaud, Cellule solaire, Simulation système, Rendement énergétique, Production énergie, Production énergie électrique, Norme, Condition météorologique, Evaluation performance, Village, Arabie saoudite, Spectre solaire, Phosphure de gallium, Phosphure d'indium, Composé ternaire, Germanium, InGaP.
- Wicri :
- geographic : Arabie saoudite.
- concept : Rendement énergétique, Norme.
English descriptors
- KwdEn :
Abstract
In this paper we present detailed balance simulations which determine the material parameters required to produce hot carrier solar cell (HCSC) annual energy yields comparable with that of multi-junction (MJ) systems. We demonstrate that HCSCs are less spectrally sensitive than equivalent MJ devices providing significant motivation for pursuing their development. Spectral variation in a given location over the course of the day and throughout the year means that the HCSC provides more consistent power production. The HCSC can also be developed for a standard reference spectrum and still perform optimally in a variety of locations with different atmospheric conditions, unlike the location sensitive performance of MJ devices. We show that an ideal hot carrier solar cell with bandgap 0.69 eV under 2000 x concentration would require a thermalization coefficient <0.1 W K-1 cm-2 to produce more power over the course of the year than an InGaP/GaAs/Ge triple junction device located at Solar Village in Saudi Arabia. The lowest experimentally demonstrated thermalization coefficient is 9.5 W K-1 cm-2 indicating that further materials development is required to achieve this target.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Spectral sensitivity of hot carrier solar cells</title><author><name sortKey="Hirst, L C" uniqKey="Hirst L">L. C. Hirst</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>U. S. Naval Research Laboratory. 4555 Overlook Ave. SW</s1><s2>Washington DC 20375</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>U. S. Naval Research Laboratory. 4555 Overlook Ave. SW</wicri:noRegion></affiliation></author><author><name sortKey="Lumb, M P" uniqKey="Lumb M">M. P. Lumb</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>The George Washington University, 2121 I Street NW</s1><s2>Washington DC 20037</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Washington DC 20037</wicri:noRegion></affiliation></author><author><name sortKey="Hoheisel, R" uniqKey="Hoheisel R">R. Hoheisel</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>The George Washington University, 2121 I Street NW</s1><s2>Washington DC 20037</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Washington DC 20037</wicri:noRegion></affiliation></author><author><name sortKey="Bailey, C G" uniqKey="Bailey C">C. G. Bailey</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>U. S. Naval Research Laboratory. 4555 Overlook Ave. SW</s1><s2>Washington DC 20375</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>U. S. Naval Research Laboratory. 4555 Overlook Ave. SW</wicri:noRegion></affiliation></author><author><name sortKey="Philipps, S P" uniqKey="Philipps S">S. P. Philipps</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr, 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Bett, A W" uniqKey="Bett A">A. W. Bett</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr, 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Walters, R J" uniqKey="Walters R">R. J. Walters</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>U. S. Naval Research Laboratory. 4555 Overlook Ave. SW</s1><s2>Washington DC 20375</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>U. S. Naval Research Laboratory. 4555 Overlook Ave. SW</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0027515</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0027515 INIST</idno><idno type="RBID">Pascal:14-0027515</idno><idno type="wicri:Area/Main/Corpus">000247</idno><idno type="wicri:Area/Main/Repository">000043</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atmospheric condition</term><term>Electric power production</term><term>Energetic efficiency</term><term>Gallium phosphide</term><term>Germanium</term><term>Hot carrier</term><term>Indium phosphide</term><term>Performance evaluation</term><term>Power production</term><term>Saudi Arabia</term><term>Solar cell</term><term>Solar spectrum</term><term>Spectral sensitivity</term><term>Standards</term><term>System simulation</term><term>Ternary compound</term><term>Village</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Sensibilité spectrale</term><term>Porteur chaud</term><term>Cellule solaire</term><term>Simulation système</term><term>Rendement énergétique</term><term>Production énergie</term><term>Production énergie électrique</term><term>Norme</term><term>Condition météorologique</term><term>Evaluation performance</term><term>Village</term><term>Arabie saoudite</term><term>Spectre solaire</term><term>Phosphure de gallium</term><term>Phosphure d'indium</term><term>Composé ternaire</term><term>Germanium</term><term>InGaP</term></keywords><keywords scheme="Wicri" type="geographic" xml:lang="fr"><term>Arabie saoudite</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Rendement énergétique</term><term>Norme</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper we present detailed balance simulations which determine the material parameters required to produce hot carrier solar cell (HCSC) annual energy yields comparable with that of multi-junction (MJ) systems. We demonstrate that HCSCs are less spectrally sensitive than equivalent MJ devices providing significant motivation for pursuing their development. Spectral variation in a given location over the course of the day and throughout the year means that the HCSC provides more consistent power production. The HCSC can also be developed for a standard reference spectrum and still perform optimally in a variety of locations with different atmospheric conditions, unlike the location sensitive performance of MJ devices. We show that an ideal hot carrier solar cell with bandgap 0.69 eV under 2000 x concentration would require a thermalization coefficient <0.1 W K<sup>-1</sup> cm<sup>-2</sup> to produce more power over the course of the year than an InGaP/GaAs/Ge triple junction device located at Solar Village in Saudi Arabia. The lowest experimentally demonstrated thermalization coefficient is 9.5 W K<sup>-1 </sup>cm<sup>-2</sup> indicating that further materials development is required to achieve this target.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>120</s2></fA05><fA06><s3>p. b</s3></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Spectral sensitivity of hot carrier solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>HIRST (L. C.)</s1></fA11><fA11 i1="02" i2="1"><s1>LUMB (M. P.)</s1></fA11><fA11 i1="03" i2="1"><s1>HOHEISEL (R.)</s1></fA11><fA11 i1="04" i2="1"><s1>BAILEY (C. G.)</s1></fA11><fA11 i1="05" i2="1"><s1>PHILIPPS (S. P.)</s1></fA11><fA11 i1="06" i2="1"><s1>BETT (A. W.)</s1></fA11><fA11 i1="07" i2="1"><s1>WALTERS (R. J.)</s1></fA11><fA14 i1="01"><s1>U. S. Naval Research Laboratory. 4555 Overlook Ave. SW</s1><s2>Washington DC 20375</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>The George Washington University, 2121 I Street NW</s1><s2>Washington DC 20037</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr, 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>610-615</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000508232450230</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>33 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0027515</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In this paper we present detailed balance simulations which determine the material parameters required to produce hot carrier solar cell (HCSC) annual energy yields comparable with that of multi-junction (MJ) systems. We demonstrate that HCSCs are less spectrally sensitive than equivalent MJ devices providing significant motivation for pursuing their development. Spectral variation in a given location over the course of the day and throughout the year means that the HCSC provides more consistent power production. The HCSC can also be developed for a standard reference spectrum and still perform optimally in a variety of locations with different atmospheric conditions, unlike the location sensitive performance of MJ devices. We show that an ideal hot carrier solar cell with bandgap 0.69 eV under 2000 x concentration would require a thermalization coefficient <0.1 W K<sup>-1</sup> cm<sup>-2</sup> to produce more power over the course of the year than an InGaP/GaAs/Ge triple junction device located at Solar Village in Saudi Arabia. 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